ASTM-F110 › Standard Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique (Withdrawn 2003)
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Scope
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This test method covers a procedure suitable for interlaboratory comparisons of layer thickness. This test method is applicable for layers of any resistivity so long as the layer differs from the silicon substrate under it either in conductivity type or in resistivity by at least one order of magnitude. The method described is destructive in nature but is more widely applicable than the alternate infrared method, Test Method F95.
1.2 For layers with thicknesses between 1 and 25 µm, an interlaboratory precision as defined in Practice E177, of +(0.15 T + 0.5 µm) (3S) can be achieved where T represents thickness expressed in micrometres.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.
Keywords
angle lapping; diffused layer; epitaxial layer; etching; fringe count; staining; thickness; ICS Number Code 29.045 (Semiconducting materials)
To find similar documents by ASTM Volume:
10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)
To find similar documents by classification:
29.045 (Semiconducting materials)
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Document Number
ASTM-F110-00a
Revision Level
2000A EDITION
Status
Superseded
Modification Type
Withdrawn
Publication Date
Dec. 10, 2000
Document Type
Test Method
Page Count
4 pages
Committee Number
F01.06