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Scope

1.1 This guide covers recommended design features for test structures used in accelerated stress tests, as described in Test Method F 1260M, to characterize the failure distribution of interconnect metallizations that fail due to electromigration.

1.2 This guide is restricted to structures with a straight test line on a flat surface that are used to detect failures due to an open-circuit or a percent-increase in resistance of the test line.

1.3 This guide is not intended for testing metal lines whose widths are approximately equal to or less than the estimated mean size of the metal grains in the metallization line.

1.4 This guide is not intended for test structures used to detect random defects in a metallization line.

1.5 Metallizations tested and characterized are those that are used in microelectronic circuits and devices.

Significance and Use

This guide is intended for the design of test structures used in measuring the median-time-to-failure and sigma (see Test Method F 1260M) of metallizations fabricated in ways that are of interest to the parties to the test.

This guide is intended to provide design features that facilitate accurate test-line resistance measurements used in estimating metallization temperature. The design features are also intended to promote temperature uniformity along the test line and a minimum temperature gradient at the ends of the test line when significant joule heating is produced during the accelerated stress test.

Keywords

design guideline; electromigration; electromigration failure; interconnect metallization; metallization open-circuit; metallization resistance; microelectronic; test structure

To find similar documents by ASTM Volume:

10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)

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