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Scope

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers determination of the average amount of bow of nominally circular silicon wafers, polished or unpolished, in the free (non-clamped) condition.

1.2 This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of SEMI Specifications M1.

1.3 This test method can also be applied to circular wafers of other semiconducting materials, such as gallium arsenide, or electronic substrate materials, such as sapphire or gadolinium gallium garnet, that have a diameter of 25 mm or greater, a thickness of 0.18 mm or greater, and a ratio of diameter to thickness up to 250. Wafers to be tested may have one or more fiducial flats provided they are located in such a way that the slice can be centered on the support pedestals (see 7.1.2) without falling off.

1.4 The values stated in inch-pound units are to be regarded as the standard. The values given in parentheses are for information only.

1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

bow; silicon; wafers; ICS Number Code 29.045 (Semiconducting materials)

To find similar documents by ASTM Volume:

10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)

To find similar documents by classification:

29.045 (Semiconducting materials)

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