ASTM-F996 › Complete Document History
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics (Withdrawn 2023)


Obsolete Revision Information:
   2011 R18 EDITION - REAPPROVED IN 2018 - March 1, 2018
   2011 EDITION - Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics - Jan. 1, 2011
   2010 EDITION - COMPONENTS DUE TO OXIDE TRAPPED HOLES AND INTERFACE STATES USI - May 1, 2010
   1998 R03 EDITION - REAPPROVED IN 2003 - Dec. 1, 2003
   1998 EDITION - TRAPPED HOLES AND INTERFACE STAT - May 10, 1998
   1992 EDITION - SEPARATING A TOTAL-DOSE-INDUCE - Oct. 15, 1992
   1991 EDITION - SEPARATING A TOTAL-DOSE-INDUCE - Feb. 22, 1991