IEC-60747-9 › Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

IEC-60747-9 - EDITION 3.0 - CURRENT
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IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
  1. reverse-blocking IGBT and its related technical contents have been added;
  2. reverse-conducting IGBT and its related technical contents have been added;
  3. some parts of the previous edition have been amended, combined or deleted.
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Document Number

IEC 60747-9 Ed. 3.0 b:2019

Revision Level

EDITION 3.0

Status

Current

Publication Date

Nov. 1, 2019

Committee Number

47E