MIL-PRF-19500/296 › Complete Document History
Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, JAN and UB
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REVISION G - Transistor, Field-Effect, P-Channel, Silicon, Through-Hole and Surface Mount Packages, Types 2N2609, Quality Level JAN - Feb. 6, 2020
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Obsolete Revision Information: |
REVISION F - Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, JAN and UB - Jan. 20, 2012
REV E VALIDATION 1 - VALIDATION NOTICE 1 FOR REVISION E - Dec. 5, 2008
REVISION E - SEMICONDUCTOR DEVICE, FIELD-EF - March 1, 2004
REVISION D - SEMICONDUCTOR DEVICE, FIELD-EF - March 17, 2003
REVISION C - SEMICONDUCTOR DEVICE, FIELD-EF - Sept. 19, 2001
REV B INACTIVATION 1 - INACTIVATION NOTICE 1 FOR REVISION B - June 7, 1999
REVISION B - SEMICONDUCTOR DEVICE, FIELD-EF - Feb. 5, 1993
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