MIL-PRF-19500/610 › Complete Document History
Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 and 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
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REVISION G - Semiconductor Device, Diode, Silicon, Rectifier, Schottky Barrier, Encapsulated (Axial Leaded and Surface Mount) and Unencapsulated, Types 1N6677-1 and 1N6677UR-1, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC - Aug. 21, 2019
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REV F VALIDATION 1 - VALIDATION NOTICE 1 FOR REVISION F - Nov. 9, 2018
REVISION F - Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 and 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC - Jan. 16, 2014
REVISION E/AM 1 - REVISION E/AMENDMENT 1 INTERFILED - July 9, 2012
REV E VALIDATION 1 - VALIDATION NOTICE 1 FOR REVISION E - Nov. 24, 2008
REVISION E - BARRIER, TYPES 1N6677-1 & 1N66 - Dec. 1, 2003
REVISION D - 1N6677IR-1, JAN, JANTX, JANTXV - Sept. 7, 2000
REVISION C - JAN, JANTX, JANTXV, JANS, JANH - May 29, 1997
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