MIL-PRF-19500/620 › Complete Document History
Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N5822, 1N6864, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
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REVISION L/AM 1 - REVISION L WITH AMENDMENT 1 INTERFILED - Aug. 12, 2022
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REVISION L - Semiconductor Device, Diode, Silicon, Rectifier, Schottky Barrier, Encapsulated (Axial Leaded and Surface Mount) and Unencapsulated, Types 1N5822 and 1N6864, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC - Aug. 22, 2019
REVISION K/AM 1 - REVISION K WITH AMENDMENT 1 INTERFILED - Jan. 27, 2017
REVISION K - Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, S - July 25, 2016
REVISION J - Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, S - Feb. 28, 2014
REVISION H - 1N5822, 1N5822US, 1N6864, 1N6864US, JAN, JANTX, JANTXV, JANS - April 25, 2011
REVISION G - 1N5822 & 1N5822US, 1N6864 & 1N6864US, JAN, JANTX, JANTXV, JA - Aug. 10, 2007
REVISION F - 1N5822 & 1N5822US, 1N6864 & 1N6864US, JAN, JANTX, JANTXV, JA - Aug. 18, 2005
REVISION E - Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, S - Sept. 3, 2004
REV D AMENDMENT 1 - AMENDMENT 1 FOR REVISION D - Nov. 1, 2001
REVISION D - Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, S - June 22, 2001
REV C AMENDMENT 1 - AMENDMENT 1 FOR REVISION C - Sept. 20, 1998
REVISION C - Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, S - June 21, 1998
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