Document Center List of Standards on Semiconducting Materials
ICS Code 29.045
Return to ICS Index.Up to Level 1:
The following documents are a part of this series:
ASTM:
- ASTM-D3004 - Standard Specification for Crosslinked and Thermoplastic Extruded Semi-Conducting, Conductor and Insulation Shielding Materials
- ASTM-D6095 - Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
- ASTM-E1438 - Standard Guide for Measuring Widths of Interfaces in Sputter Depth Profiling Using SIMS
- ASTM-F1049 - Standard Practice for Shallow Etch Pit Detection on Silicon Wafers (Withdrawn 2003
- ASTM-F110 - Standard Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique (Withdrawn 2003)
- ASTM-F1152 - Standard Test Method for Dimensions of Notches on Silicon Wafers (Withdrawn 2003)
- ASTM-F1188 - Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline (Withdrawn 2003)
- ASTM-F1189 - Test Method for Using Computer-Assisted Infrared Spectrophotometry to Measure the Interstitial Oxygen Content of Silicon Slices Polished on Both Sides (Withdrawn 1993)
- ASTM-F120 - Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy (Withdrawn 1993)
- ASTM-F1212 - Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers
- ASTM-F123 - Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption (Withdrawn 1992)
- ASTM-F1239 - Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction (Withdrawn 2003)
- ASTM-F1241 - Standard Terminology of Silicon Technology (Withdrawn 2003)
- ASTM-F1366 - Standard Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry (Withdrawn 2003)
- ASTM-F1389 - Standard Test Methods for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities (Withdrawn 2003)
- ASTM-F1390 - Standard Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning (Withdrawn 2003)
- ASTM-F1391 - Standard Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption (Withdrawn 2003)
- ASTM-F1392 - Standard Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements With a Mercury Probe (Withdrawn 2003)
- ASTM-F1393 - Standard Test Method for Determining Net Carrier Density in Silicon Wafers by Miller Feedback Profiler Measurements With a Mercury Probe (Withdrawn 2003)
- ASTM-F1404 - Test Method for Crystallographic Perfection of Gallium Arsenide by Molten Potassium Hydroxide (KOH) Etch Technique (Withdrawn 2016)
- ASTM-F1451 - Standard Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning (Withdrawn 2003)
- ASTM-F1526 - Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy (Withdrawn 2003)
- ASTM-F1527 - Standard Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon (Withdrawn 2003)
- ASTM-F1528 - Standard Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry (Withdrawn 2003)
- ASTM-F1529 - Standard Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure
- ASTM-F1530 - Standard Test Method for Measuring Flatness, Thickness, and Thickness Variation on Silicon Wafers by Automated Noncontact Scanning (Withdrawn 2003)
- ASTM-F1535 - Standard Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance (Withdrawn 2003)
- ASTM-F1569 - Standard Guide for Generation of Consensus Reference Materials for Semiconductor Technology (Withdrawn 2003)
- ASTM-F1618 - Standard Practice for Determination of Uniformity of Thin Films on Silicon Wafers (Withdrawn 2003)
- ASTM-F1619 - Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle (Withdrawn 2003)
- ASTM-F1620 - Standard Practice for Calibrating a Scanning Surface Inspection System Using Monodisperse Polystyrene Latex Spheres Deposited on Polished or Epitaxial Wafer Surfaces (Withdrawn 2003)
- ASTM-F1621 - Standard Practice for Determining the Positional Accuracy Capabilities of a Scanning Surface Inspection System (Withdrawn 2003)
- ASTM-F1630 - Standard Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities (Withdrawn 2003)
- ASTM-F1724 - Standard Test Method for Measuring Surface Metal Contamination of Polycrystalline Silicon by Acid Extraction-Atomic Absorption Spectroscopy (Withdrawn 2003)
- ASTM-F1725 - Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots (Withdrawn 2003)
- ASTM-F1726 - Standard Guide for Analyis of Crystallographic Perfection of Silicon Wafers (Withdrawn 2003)
- ASTM-F1727 - Standard Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers (Withdrawn 2003)
- ASTM-F1771 - Standard Test Method for Evaluating Gate Oxide Integrity by Voltage Ramp Technique (Withdrawn 2003)
- ASTM-F1809 - Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon (Withdrawn 2003)
- ASTM-F1810 - Standard Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers (Withdrawn 2003)
- ASTM-F1894 - Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness
- ASTM-F1982 - Standard Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography (Withdrawn 2003)
- ASTM-F2074 - Standard Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers (Withdrawn 2003)
- ASTM-F2113 - Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications
- ASTM-F28 - Standard Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay (Withdrawn 2003)
- ASTM-F35 - Practice for Identification of Minute Crystalline Particle Contaminants by X-Ray Diffraction (Withdrawn 1994)
- ASTM-F358 - Standard Test Method for Wavelength of Peak Photoluminescence and the Corresponding Composition of Gallium Arsenide Phosphide Wafers
- ASTM-F374 - Standard Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure (Withdrawn 2003)
- ASTM-F388 - Method for Measurement of Oxide Thickness on Silicon Wafers and Metallization Thickness by Multiple-Beam Interference (Tolansky Method) (Withdrawn 1993)
- ASTM-F391 - Standard Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage (Withdrawn 2003)
- ASTM-F397 - Standard Test Method for Resistivity of Silicon Bars Using a Two-Point Probe (Withdrawn 2003)
- ASTM-F398 - Standard Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavenumber or Wavelength of the Plasma Resonance Minimum (Withdrawn 2003)
- ASTM-F399 - Standard Test Method for Thickness of Heteroepitaxial or Polysilicon Layers (Withdrawn 2002)
- ASTM-F40 - Method for Preparing Monocrystalline Test Ingots of Silicon by the Vertical-Pulling (Czochralski) Technique (Withdrawn 1988)
- ASTM-F41 - Practice for Preparing Silicon Single Crystals by the Floating-Zone Technique for Evaluation of Polysilicon Ingot (Withdrawn 1996)
- ASTM-F416 - Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers (Withdrawn 1998)
- ASTM-F418 - Standard Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements
- ASTM-F42 - Standard Test Methods for Conductivity Type of Extrinsic Semiconducting Materials (Withdrawn 2003)
- ASTM-F43 - Standard Test Methods for Resistivity of Semiconductor Materials (Withdrawn 2003)
- ASTM-F47 - Test Method for Crystalographic Perfection of Silicon by Preferential Etch Techniques (Withdrawn 1998)
- ASTM-F522 - Test Method for Stacking Fault Density of Epitaxial Layers of Silicon by Interference-Contrast Microscopy (Withdrawn 1998)
- ASTM-F523 - Standard Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces (Withdrawn 2003)
- ASTM-F525 - Standard Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe (Withdrawn 2003)
- ASTM-F533 - Standard Test Method for Thickness and Thickness Variation of Silicon Wafers (Withdrawn 2003)
- ASTM-F534 - Standard Test Method for Bow of Silicon Wafers (Withdrawn 2003)
- ASTM-F576 - Standard Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry (Withdrawn 2003)
- ASTM-F612 - Practice for Cleaning Surfaces of Polished Silicon Slices (Withdrawn 1993)
- ASTM-F613 - Test Method for Measuring Diameter of Semiconductor Wafers (Withdrawn 2001)
- ASTM-F615M - Standard Practice for Determining Safe Current Pulse-Operating Regions for Metallization on Semiconductor Components (Metric) (Withdrawn 2022)
- ASTM-F657 - Standard Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning (Withdrawn 2003)
- ASTM-F671 - Standard Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials (Withdrawn 2003)
- ASTM-F672 - Standard Test Method for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe (Withdrawn 2003)
- ASTM-F673 - Standard Test Methods for Measuring Resistivity of Semiconductor Slices or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage (Withdrawn 2003)
- ASTM-F674 - Standard Practice for Preparing Silicon for Spreading Resistance Measurements (Withdrawn 2003)
- ASTM-F723 - Standard Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon (Withdrawn 2003)
- ASTM-F76 - Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors (Withdrawn 2023)
- ASTM-F77 - Test Method for Apparent Density of Ceramics for Electron Device and Semiconductor Application (Withdrawn 2001)
- ASTM-F775 - Test Method for Wafer and Slice Flatness by Interferometric (Withdrawn 1991)
- ASTM-F80 - Test Method for Crystallographic Perfection of Epitaxial Deposits of Silicon by Etching Techniques (Withdrawn 1998)
- ASTM-F81 - Standard Test Method for Measuring Radial Resistivity Variation on Silicon Wafers (Withdrawn 2003)
- ASTM-F84 - Standard Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe (Withdrawn 2003)
- ASTM-F847 - Standard Test Methods for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques (Withdrawn 2003)
- ASTM-F928 - Standard Test Methods for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates (Withdrawn 2003)
- ASTM-F95 - Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
- ASTM-F950 - Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching (Withdrawn 2003)
- ASTM-F951 - Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers (Withdrawn 2003)
- ASTM-F978 - Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques (Withdrawn 2003)
- ASTM-F980 - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
BSI:
- BS-EN-60146-1-1 - Semiconductor converters. General requirements and line commutated converters
- BS-IEC-62899-203 - Printed electronics
- BS-IEC-62899-503-1 - Printed electronics
- BS-IEC-62899-503-3 - Printed electronics
- PD-IEC-60146-1-2 - Semiconductor converters. General requirements and line commutated converters
IEC:
- IEC-60146-1-1 - Semiconductor converters - General requirements and line commutated converters - Part 1-1: Specification of basic requirements
- IEC-60146-1-1 CMV - Semiconductor converters - General requirements and line commutated converters - Part 1-1: Specification of basic requirements
- IEC-60146-1-2 - Semiconductor converters - General requirements and line commutated converters - Part 1-2: Application guidelines
- IEC-60146-1-2-RL - Semiconductor converters - General requirements and line commutated converters - Part 1-2: Application guidelines
- IEC-62899-203 - Printed electronics - Part 203: Materials - Semiconductor ink
- IEC-62899-503-1 - Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor
- IEC-62899-503-3 - Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method
Other SDOs:
- DIN-50438-3 - Part 3: Determination of Boron & Phosphorus Concentrations, Determination of Impuriti
- DIN-50451-1 - Part 1: Determination of Calcium, Copper, Gold, Iron, Potassium, Silver and Sodium in NI
- DIN-50451-2 - Part 2: Determination of Calcium, Chromium, Cobolt, Copper, Iron, Nickel and Zinc in Hy
- DIN-50451-3 - Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS
- EN-60146-1-1 - Part 1-1: Specification of Basic Requirements, Semiconductor Converters - General Requ