ASTM-F1238 › Standard Specification for Refractory Silicide Sputtering Targets for Microelectronic Applications
The following bibliographic material is provided to assist you with your purchasing decision:
This specification covers refractory silicide sputtering targets for use in microelectronic applications. Targets shall be classified by the following major constituents: molybdenum silicide, tantalum silicide, titanium silicide, and tungsten silicide. Target composition shall be stated as the atomic ratio of silicon to metal and shall conform to the prescribed maximum impurity level for: alkalis (potassium, lithium, sodium), refractory metals (molybdenum, tantalum, titanium, and tungsten), iron, other metals (aluminum, boron, calcium, cobalt, chromium, copper, magnesium, manganese, and nickel), carbon, and oxygen. Low alpha grade targets shall contain the prescribed maximum impurity level of uranium and thorium Dimensional and physical properties such as relative, actual, and theoretical densities are specified. The actual target density shall be determined by Archimedes principle or other acceptable techniques and the theoretical density shall be calculated from the given formula. The following chemical analytical methods shall be used: atomic absorption, combustion or infrared spectrometry, inert gas fusion, and alpha-emission rate analysis, depending on the impurity to be analyzed. There shall be no radial cracks, other cracks, or chips on the sputtering surface.
Scope
1.1 This specification covers sputtering targets fabricated from metallic silicides (molybdenum silicide, tantalum silicide, titanium silicide, and tungsten silicide). These targets are referred to as refractory silicide targets, and are intended for use in microelectronic applications.
1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
Keywords
density; microelectronics; molybdenum disilicide; refractory silicides; sputtering; sputtering targets; tantalum disilicide; titanium disilicide; tungsten disilicide; Electrical conductors (semiconductors)--specifications; Electronic materials/applications--specifications; Metallic silicide; Molybdenum (electronic applications)--specifications; Polycaprolactone (PCL); Refractory silicide targets; Silicides; Tantalum (Ta)/tantalum alloys--specifications; Targets; Titanium silicide; Tungsten silicide (WSi
To find similar documents by ASTM Volume:
10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)
To find similar documents by classification:
This document comes with our free Notification Service, good for the life of the document.
This document is available in either Paper or PDF format.
Document Number
ASTM-F1238-95(2011)
Revision Level
1995 R11 EDITION
Status
Current
Modification Type
Reapproval
Publication Date
July 1, 2011
Document Type
Specification
Page Count
3 pages
Committee Number
F01.17