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This standard was transferred to SEMI (www.semi.org) May 2003

1.1 These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related to the amount of interstitial oxygen lost during specified thermal cycles.

1.2 These test methods may be used to compare qualitatively the precipitation characteristics of two or more groups of wafers.

1.3 These test methods may be applied to any - or -type, any orientation Czochralski silicon wafers whose thickness, resistivity, and surface finish are such as to permit the oxygen concentration to be determined by infrared absorption and whose oxygen concentration is such as to produce measurable oxygen loss.

1.4 These test methods are not suitable for determining the width or characteristics of a "denuded zone," a region near the surface of a wafer that is essentially free of oxide precipitates.

1.5 Because these test methods are destructive, suitable sampling techniques must be employed.

1.6 The values stated in SI units are regarded as standard.

1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.

Keywords

delta O; interstitial oxygen; oxygen precipitation; oxygen reduction; silicon; ICS Number Code 29.045 (Semiconducting materials)

To find similar documents by ASTM Volume:

10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)

To find similar documents by classification:

29.045 (Semiconducting materials)

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