ASTM-F1982 Standard Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography (Withdrawn 2003)

ASTM-F1982 - 1999(E1) EDITION - SUPERSEDED
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Standard Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography (Withdrawn 2003)

Scope

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 These test methods cover the identification and quantification of organic contaminants on silicon wafer surfaces using a gas chromatograph interfaced to a mass spectrometer (GC-MS) or a phosphorus selective detector, or both.

1.2 These test methods describe the apparatus and related procedures for sample preparation and analyses by thermal desorption gas chromatography (TD-GC).

1.3 The range of detection limits of these test methods depend on the target organic compounds, for example, the range of detection limits will be subpicogram to nanogram level of hydrocarbons (C8 to C23)/p 1 cm2 of a silicon wafer surface.

1.4 These test methods can be used for polished silicon wafers, or silicon wafers and oxide films.

1.5 One of two methods can be performed. Method A is performed on cleaved wafers. Method B is performed on full wafers. The detailed procedures of Method A and Method B, as well as, the difference between them, are described in Section 4 and 7.

1.6 Safety precautions must be followed when handling organic solvents and compounds, hot materials subjected to propane flame, the propane flame itself, wafer thermal desorption systems, rapid thermal annealer, or a high temperature furnace.

1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

atomic emission detector (AED); flame ionization detector (FID); flame photometric detector(FPD); gas chromatography; mass spectrometer (MS); nitrogen/phosphorus thermionic detector(NPD); organic contamination; organophosphorus compounds; phosphorus selective detector; silicon wafer surfaces thermal desorption; ICS Number Code 29.045 (Semiconducting materials)

To find similar documents by ASTM Volume:

10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)

To find similar documents by classification:

29.045 (Semiconducting materials)

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Document Number

ASTM-F1982-99e1

Revision Level

1999(E1) EDITION

Status

Superseded

Modification Type

Withdrawn

Publication Date

Oct. 1, 1999

Document Type

Test Method

Page Count

7 pages

Committee Number

F01.06