ASTM-F448M Test Method for Measuring Steady-State Primary Photocurrent [Metric] (Withdrawn 1999)

ASTM-F448M - 1994 EDITION - SUPERSEDED
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Test Method for Measuring Steady-State Primary Photocurrent [Metric] (Withdrawn 1999)

Scope

1.1 This test method covers the measurement of steady-state primary photocurrent, pp , generated in semiconductor devices when these devices are exposed to ionizing radiation. These procedures are intended for the measurement of photocurrents greater than 10 -9 A[dot]s/Gy(Si or Ge), in cases for which the relaxation time of the device being measured is less than 25% of the pulse width of the ionizing source. The validity of these procedures for ionizing dose rates as great as 10 Gy(Si or Ge)/s has been established. The procedures may be used for measurements at dose rates as great as 10 10 Gy(Si or Ge)/s; however, extra care must be taken. Above 10 Gy/s the package response may dominate the device response for technologies such as complementary metal-oxide semiconductor, (CMOS)/silicon-on sapphire (SOS). Additional precautions are also required when measuring photocurrents of 10 -9 A[dot]s/Gy(Si or Ge) or lower.

1.2 Setup, calibration, and test circuit evaluation procedures are also included in the test method.

1.3 Procedures for lot qualification and sampling are not included in this test method.

1.4 Because of the variability between device types and in the requirements of different applications, the dose rate range over which any specific test is to be conducted is not given in the test method but must be specified separately.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

Calorimeter; Current measurement-semiconductors; Electrical conductors-semiconductors; Insulated gate field-effect (semiconductor) devices; Irradiance/irradiation-semiconductors; Junction field-effect (semiconductor) devices; Radiation exposure-electronic components/devices; Thermoluminescent detector (TLD); Transistors; Zener diodes; steady-state primary photocurrents, test; ICS Number Code 31.260 (Optoelectronics. Laser equipment)

To find similar documents by classification:

31.260 (Optoelectronics. Laser equipment Including photoelectric tubes and cells)

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This document is available in Paper format.

Document Number

ASTM-F448M-94

Revision Level

1994 EDITION

Status

Superseded

Modification Type

Replaced

Publication Date

April 15, 1994

Document Type

Test Method

Page Count

7 pages

Committee Number

F01.11