IEC-60747-7 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

IEC-60747-7 - EDITION 3.1 - CURRENT
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Included in this current edition are the following subparts:

 FOR ED. 3.0 AMENDMENT 1 SEE - Sept. 1, 2019
 EDITION 3.1 - Sept. 1, 2019

IEC 60747-7:2010+A1:2019 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors.
- Small signal transistors (excluding switching and microwave applications);
- Linear power transistors (excluding switching, high-frequency, and microwave applications);
- High-frequency power transistors for amplifier and oscillator applications;
- Switching transistors for high speed switching and power switching applications;
- Resistor biased transistors. The main changes with respect to previous edition are listed below.
a) Clause 1 was amended by adding an item that should be included.
b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included.
c) The text of the second edition was combined with that of IEC 60747-7-5.
This publication is to be read in conjunction with IEC 60747-1:2006.
This consolidated version consists of the third edition (2010) and its amendment 1 (2019). Therefore, no need to order amendments in addition to this publication.



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Document Number

IEC 60747-7 Ed. 3.1 b:2019

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Publication Date

Sept. 1, 2019

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