IEC-62979 Photovoltaic modules - Bypass diode - Thermal runaway test

IEC-62979 - EDITION 1.0 - CURRENT


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IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

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Document Number

IEC 62979 Ed. 1.0 en:2017

Revision Level

EDITION 1.0

Status

Current

Publication Date

Aug. 1, 2017

Committee Number

82