IEC-63373 Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

IEC-63373 - EDITION 1.0 - CURRENT


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IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices;
b) GaN integrated power solutions;
c) the above in wafer and package levels.
The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
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Document Number

IEC 63373 Ed. 1.0 b:2022

Revision Level

EDITION 1.0

Status

Current

Publication Date

Feb. 1, 2022

Committee Number

47