ISO-14706 › Historical Revision Information
Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
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This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.
The method is applicable to:
- elements of atomic number from 16 (S) to 92 (U);
- contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2;
- contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).
To find similar documents by classification:
71.040.40 (Chemical analysis Including analysis of gases and surface chemical analysis)
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Document Number
ISO 14706:2000
Revision Level
1ST EDITION
Status
Superseded
Publication Date
Dec. 15, 2000
Committee Number
ISO TC 201/WG 2