ISO-17560 › Historical Revision Information
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
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ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.
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71.040.40 (Chemical analysis Including analysis of gases and surface chemical analysis)
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Document Number
ISO 17560:2002
Revision Level
1ST EDITION
Status
Superseded
Publication Date
July 15, 2002
Committee Number
ISO/TC 201/SC 6