ISO-23812 › Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth calibration for silicon using multiple delta-layer reference materials
ISO-23812
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1ST EDITION
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CURRENT
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ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
To find similar documents by classification:
71.040.40 (Chemical analysis Including analysis of gases and surface chemical analysis)
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Document Number
ISO 23812:2009
Revision Level
1ST EDITION
Status
Current
Publication Date
April 15, 2009
Committee Number
ISO/TC 201/SC 6