MIL-PRF-19500/385 › Complete Document History
Transistors, Junction Field Effect, N-Channel, Silicon, Device Types 2N4856 Through 2N4861, JAN, JANTX, JANTXV, and JANS
| Complete Current Edition: |
REVISION K/AM 1 - REVISION K WITH AMENDMENT 1 INTERFILED - Feb. 14, 2020
|
Obsolete Revision Information: |
REVISION K - Transistor, Junction Field Effect, N-Channel, Radiation Hardened, Silicon, Device Types 2N4856 Through 2N4861, JAN, JANTX, JANTXV, and JANS - Aug. 27, 2019
REVISION J - Transistors, Junction Field Effect, N-Channel, Silicon, Device Types 2N4856 Through 2N4861, JAN, JANTX, JANTXV, and JANS - June 2, 2015
REVISION H/AM 1 - REVISION H/AMENDMENT 1 INTERFILED - June 17, 2011
REVISION H - Semiconductor Device, Field Effect Transistors, N-Channel, S - March 10, 2009
REVISION G - THROUGH 2N4861, 2N4856UB THROUGH 2N4861UB, JAN, JANTX, JANTX - Aug. 21, 2007
REVISION F - THROUGH 2N4861, 2N4856UB THROUGH 2N4861UB, JAN, JANTX, JANTX - Oct. 9, 2006
REVISION E - 2N4861, 2N4856UB THROUGH 2N4861UB, JAN, JANTX, JANTXV, & JAN - Aug. 29, 2005
REV D AMENDMENT 2 - AMENDMENT 2 FOR REVISION D - Oct. 22, 2002
REV D AMENDMENT 1 - AMENDMENT 1 FOR REVISION D - Nov. 28, 2001
REVISION D - 2N4861 JAN, JANTX, JANTXV, & J - April 12, 2001
REVISION C - SEMICONDUCTOR DEVICE, FIELD EF - July 19, 2000
REV B AMENDMENT 1 - AMENDMENT 1 FOR REVISION B - June 21, 1998
REVISION B - SEMICONDUCTOR DEVICE, FIELD EF - Aug. 12, 1997
|