MIL-PRF-19500/543 › Complete Document History
Transistor, Field Effect, N-Channel, Silicon Repetitive Avalanche, Encapsulated (through-Hole Packages) and Un-Encapsulated (Die), Types 2N6764, 2N6766, 2N6768, 2N6770, and JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
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REVISION P/AM 1 - REVISION P WITH AMENDMENT 1 INTERFILED - March 8, 2021
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Obsolete Revision Information: |
REVISION P - Transistor, Field Effect, N-Channel, Silicon Repetitive Avalanche, Encapsulated (through-Hole Packages) and Un-Encapsulated (Die), Types 2N6764, 2N6766, 2N6768, 2N6770, and JAN, JANTX, JANTXV, JANS, JANHC, and JANKC - March 30, 2016
REVISION N/AM 1 - REVISION N/AMENDMENT 1 INTERFILED - Sept. 13, 2013
REVISION N - Semiconductor Device, Field Effect Transistors, N-Channel, S - March 29, 2013
REVISION M - Avalanche, Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, - Sept. 22, 2011
REVISION L - AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, - May 17, 2010
REVISION K - TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, - May 9, 2008
REVISION J - TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, - Dec. 5, 2006
REVISION H - TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, - April 18, 2005
DRAFT REVISION H - OBSOLETE DRAFT DOCUMENT - July 12, 2004
REVISION G - TYPES 2N6764, 2N6766, 2N6768, - May 19, 2003
REV F AMENDMENT 1 - AMENDMENT 1 FOR REVISION F - Aug. 6, 2002
REVISION F - TYPES 2N6764, 2N6766, 2N6768, - Sept. 7, 2001
REV E AMENDMENT 2 - AMENDMENT 2 FOR REVISION E - Sept. 22, 1998
REV E AMENDMENT 1 - AMENDMENT 1 FOR REVISION E - Dec. 10, 1997
REVISION E - SEMICONDUCTOR DEVICE, FIELD EF - Aug. 5, 1997
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