MIL-PRF-19500/601 › Complete Document History
Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H
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REVISION L/AM 1 - REVISION L WITH AMENDMENT 1 INTERFILED - Feb. 15, 2022
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Obsolete Revision Information: |
REVISION L - Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H - May 23, 2016
REVISION K - Semiconductor Device, Field Effect Power Transistors, N-Chan - April 17, 2013
REVISION J - Effects) Transistors, N-Channel, Silicon, Types 2N7261 and 2 - March 14, 2012
REVISION H - N-CHANNEL, SILICON, TYPES 2N7261 & 2N7262 & U SUFFIXES, JANT - June 10, 2011
REVISION G - N-CHANNEL, SILICON, TYPES 2N7261 & 2N7262 & U SUFFIXES, JANT - July 5, 2006
REVISION F - N-CHANNEL, SILICON, TYPES 2N72 - Nov. 16, 2004
REVISION D - N-CHANNEL, SILICON TYPES 2N726 - July 17, 2001
REVISION C - SEMICONDCUTOR DEVICE, FIELD EF - Oct. 12, 1997
REVISION B - SEMICONDUCTOR DEVICE, FIELD-EF - June 6, 1997
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