MIL-PRF-19500/634 | Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR | Document Center, Inc.

MIL-PRF-19500/634 › Complete Document History
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR

Complete Current Edition:

REVISION E - Types 2N7405, 2N7406, 2N7407, and 2N7408, Quality Levels JANSD and JANSR - Oct. 29, 2019

Obsolete Revision Information:

   REV D VALIDATION 1 - VALIDATION NOTICE 1 FOR REVISION D - Nov. 7, 2018
   REVISION D - Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR - Dec. 6, 2013
   REVISION C - EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N740 - Sept. 12, 2008
   REVISION B - SEMICONDUCTOR DEVICE, FIELD EF - April 16, 2004
   REV A VALIDATION 1 - VALIDATION NOTICE 1, REV A - June 16, 2003
   REVISION A - SEMICONDUCTOR DEVICE, FIELD EF - Sept. 2, 1998
   BASE - SEMICONDUCTOR DEVICE, FIELD EF - Nov. 29, 1996