MIL-PRF-19500/643 › Complete Document History
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6766 and 1N6767, 1N6766R and 1N6767R, JAN, JANTX, JANTXV, and JANS
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REVISION E/AM 1 - REVISION E WITH AMENDMENT 1 INTERFILED - Sept. 23, 2022
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Obsolete Revision Information: |
REVISION E - Semiconductor Device, Unitized, Diode, Silicon, Power Rectifier, Ultrafast, Dual (Common Cathode or Common Anode Center Tap) Types 1N6766 and 1N6767, Standard and Reverse Polarity, Quality Levels JAN, JANTX, JANTXV, and JANS - Dec. 8, 2021
REVISION D - Semiconductor Device, Unitized, Diode, Silicon, Power Rectifier, Ultrafast, Dual (Common Cathode or Common Anode Center Tap) Types 1N6766 and 1N6767, Standard and Reverse Polarity, Quality Levels JAN, JANTX, JANTXV and JANS - May 27, 2020
REV C VALIDATION 1 - VALIDATION NOTICE 1 FOR REVISION C - Nov. 3, 2016
REVISION C/AM 1 - REVISION C WITH AMENDMENT 1 INTERFILED - Feb. 3, 2012
REVISION C - Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, - Aug. 24, 2007
REVISION B - CENTER TAP, ULTRAFAST, TYPES 1N6766 & 1N6767, 1N6766R & 1N67 - Aug. 4, 2006
DRAFT REVISION B - WORKING DRAFT - Feb. 17, 2006
REVISION A - CENTER TAP, ULTRAFAST, TYPES 1N6766 & 1N6767, 1N6766R & 1N67 - Oct. 24, 2005
BASE - CENTER TAP, ULTRAFAST, TYPES 1 - April 18, 1997
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