MIL-PRF-19500/660 › Complete Document History
Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon, Types 2N7424, 2N7425, and 2N7426, JANTXVR, JANTXVF, JANSR, and JANSF
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REVISION E/AM 1 - REVISION E WITH AMENDMENT 1 INTERFILED - Dec. 20, 2019
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Obsolete Revision Information: |
REV E VALIDATION 1 - VALIDATION NOTICE 1 FOR REVISION E - Nov. 7, 2018
REVISION E - Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon, Types 2N7424, 2N7425, and 2N7426, JANTXVR, JANTXVF, JANSR, and JANSF - Dec. 6, 2013
REVISION D - Semiconductor Device, Field Effect Radiation Hardened (Total - Feb. 11, 2013
REVISION C - P-CHANNEL SILICON, TYPES 2N7424, 2N7425, & 2N7426, JANTXVR, - Feb. 8, 2008
REVISION B - P-CHANNEL SILICON, TYPES 2N7424, 2N7425, & 2N7426, JANTXVR, - June 4, 2007
REVISION A - CHANNEL SILICON, TYPES 2N7424, - Oct. 28, 2003
AMENDMENT 2 - AMENDMENT 2 FOR BASE - April 5, 2002
AMENDMENT 1 - AMENDMENT 1 FOR BASE - Feb. 21, 2001
BASE - SILICON TYPES 2N7424, 2N7425, - May 27, 1998
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