MIL-PRF-19500/661 › Complete Document History
Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7444, 2N7434, 2N7391, and 2N7392, JANTXVR and JANSR
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REVISION F/AM 2 - REVISION F WITH AMENDMENT 2 INTERFILED - Jan. 25, 2024
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Obsolete Revision Information: |
REVISION F/AM 1 - REVISION F WITH AMENDMENT 1 INTERFILED - Nov. 23, 2018
REVISION F - Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7444, 2N7434, 2N7391, and 2N7392, JANTXVR and JANSR - Jan. 24, 2017
REVISION E - Semiconductor Device, Field Effect Radiation Hardened (Total - Feb. 25, 2014
REVISION D - Semiconductor Device, Field Effect Radiation Hardened (Total - April 17, 2013
REVISION C/AM 1 - REVISION C/AMENDMENT 1 INTERFILED - June 18, 2012
REVISION C - Semiconductor Device, Field Effect Radiation Hardened (Total - Aug. 7, 2006
DRAFT REVISION C - WORKING DRAFT - Dec. 23, 2005
REVISION B - Semiconductor Device, Field Effect Radiation Hardened (Total - Dec. 7, 2004
VALIDATION NOTICE 1 - VALIDATION NOTICE 1 FOR BASE - June 16, 2003
BASE - Semiconductor Device, Field Effect Radiation Hardened (Total - Aug. 18, 1998
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