MIL-PRF-19500/687 | Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R | Document Center, Inc.

MIL-PRF-19500/687 › Complete Document History
Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R

Complete Current Edition:

REV D CANCELLATION 1 - CANCELLATION NOTICE 1 FOR REVISION D - Oct. 21, 2022

Obsolete Revision Information:

   REVISION D - Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R - April 28, 2016
   REVISION C - Semiconductor Device, Field Effect Radiation Hardened Transi - Dec. 18, 2013
   REV B VALIDATION 1 - VALIDATION NOTICE 1 FOR REVISION B - Aug. 13, 2013
   REVISION B - Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510 - Oct. 3, 2008
   REVISION A - TRANSISTOR, N-CHANNEL SILICON, - July 12, 2004
   AMENDMENT 1 - AMENDMENT 1 FOR BASE - Aug. 22, 2001
   BASE - TRANSISTOR, N-CHANNEL SILICON - March 14, 2001