MIL-PRF-19500/698 › Complete Document History
Transistor, Field Effect Radiation Hardened, N-Channel, Device Types 2N7470T1 and 2N7471T1, JANTXVR, F, G, and H and JANSR, F, G, and H
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REVISION G/AM 2 - REVISION G WITH AMENDMENT 2 INTERFILED - April 16, 2019
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Obsolete Revision Information: |
REVISION G/AM 1 - REVISION G WITH AMENDMENT 1 INTERFILED - Sept. 21, 2017
REVISION G - Transistor, Field Effect Radiation Hardened, N-Channel, Devi - Jan. 25, 2017
REVISION F - Transistor, Field Effect Radiation Hardened, N-Channel, Devi - March 13, 2015
REVISION E - Effects) Transistor, N-Channel, Silicon Types 2N7470T1 and 2 - May 20, 2013
REVISION D - EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 & 2N7 - Nov. 1, 2010
REVISION C - EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 & 2N7 - Oct. 22, 2007
REVISION B - EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 & 2N7 - Dec. 22, 2005
REVISION A - TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 & 2N7471T1, JA - Dec. 21, 2004
AMENDMENT 1 - AMENDMENT 1 FOR BASE - Jan. 22, 2002
BASE - TRANSISTOR, N-CHANNEL, SILICON - Aug. 16, 2001
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