MIL-PRF-19500/704 › Complete Document History
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, and 2N7487U3, and 2N7555U3 JANTXVR and JANSR
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REVISION F/AM 2 - REVISION F WITH AMENDMENT 2 INTERFILED - Nov. 3, 2022
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Obsolete Revision Information: |
REVISION F/AM 1 - REVISION F WITH AMENDMENT 1 INTERFILED - July 17, 2019
REVISION E - Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, and 2N7487U3, and 2N7555U3 JANTXVR and JANSR - Jan. 25, 2013
REVISION D - Effects) Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7 - July 18, 2012
REVISION C - EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7 - Dec. 13, 2010
REVISION B/AM 1 - REVISION B/AMENDMENT 1 INTERFILED - Jan. 20, 2010
REVISION B - SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL - Sept. 9, 2008
REVISION A - EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7 - Dec. 22, 2004
BASE - TRANSISTOR, N-CHANNEL SILICON - Jan. 18, 2002
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