MIL-PRF-19500/733 › Complete Document History
Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F
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REVISION F/AM 3 - REVISION F WITH AMENDMENT 3 INTERFILED - Oct. 22, 2021
REV F ADMINISTRATIVE 1 - ADMINISTRATIVE NOTICE 1 FOR REVISION F - Nov. 18, 2021
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Obsolete Revision Information: |
REVISION F/AM 2 - REVISION F WITH AMENDMENT 2 INTERFILED - Feb. 4, 2020
REVISION F/AM 1 - REVISION F WITH AMENDMENT 1 INTERFILED - March 12, 2019
REVISION F - Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F - June 9, 2016
REVISION E - Transistor, Field Effect Radiation Hardened P-Channel, Devic - Nov. 4, 2015
REVISION D - 2N7523U2, 2N7524T1, and 2N7524U2, JANTXVR, F and JANSR, F - May 6, 2015
REVISION C - Semiconductor Device, Field Effect Radiation Hardened Transi - April 18, 2014
REVISION B - EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N - Sept. 10, 2010
REVISION A - EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N - Nov. 12, 2007
BASE - TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2 - Nov. 30, 2005
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