MIL-PRF-19500/757 | Transistor, Field Effect Radiation Hardened, P-Channel, Silicon, through Hole and Surface Mount, Types 2N7624 and 2N7625 Quality Levels JANTXV and JANS | Document Center, Inc.

MIL-PRF-19500/757 › Complete Document History
Transistor, Field Effect Radiation Hardened, P-Channel, Silicon, through Hole and Surface Mount, Types 2N7624 and 2N7625 Quality Levels JANTXV and JANS

Complete Current Edition:

REVISION C/AM 2 - REVISION C WITH AMENDMENT 2 INTERFILED - Feb. 25, 2021

Obsolete Revision Information:

   REVISION C/AM 1 - REVISION C WITH AMENDMENT 1 INTERFILED - Oct. 10, 2019
   REVISION C - Transistor, Field Effect Radiation Hardened, P-Channel, Silicon, through Hole and Surface Mount, Types 2N7624 and 2N7625 Quality Levels JANTXV and JANS - Oct. 8, 2014
   REVISION B - Semiconductor Device, Field Effect Radiation Hardened Transi - April 18, 2014
   REVISION A - SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RA - April 11, 2011
   BASE - DOSE & SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPE 2N76 - June 30, 2009