MIL-S-19500/531 | Semiconductor Device, Field Effect Transistor, N Channel, Dual Gate, Depletion Type, Insulated Gate, Silicon Device Types 3N201, 3N202, 3N203 and Tx, Txv (No Superseding Document) | Document Center, Inc.

MIL-S-19500/531 › Complete Document History
Semiconductor Device, Field Effect Transistor, N Channel, Dual Gate, Depletion Type, Insulated Gate, Silicon Device Types 3N201, 3N202, 3N203 and Tx, Txv (No Superseding Document)

Obsolete Revision Information:

   CAN NOT 1 - SEMICONDUCTOR DEVICE, FIELD EF - March 19, 1982
   AM 1 - SEMICONDUCTOR DEVICE, FIELD EF - Feb. 21, 1979
   BASE - SEMICONDUCTOR DEVICE, FIELD EF - Oct. 25, 1977