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Scope

1.1 This test method covers the determination of the interstitial oxygen content of single crystal silicon by infrared spectroscopy. This test method requires the use of an oxygen-free reference specimen and a set of calibration standards, such as those comprising NIST SRM 2551. It permits, but does not require, the use of a computerized spectrophotometer.

1.2 The useful range of oxygen concentration measurable by this test method is from 1 X 10¹⁶ atoms/cm³ to the maximum amount of interstitial oxygen soluble in silicon.

1.3 The oxygen concentration obtained using this test method assumes a linear relationship between the interstitial oxygen concentration and the absorption coefficient of the 1107 cm^-1 band associated with interstitial oxygen in silicon.

1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

Infrared absorption; interstitial oxygen; oxygen; silicon; ICS Number Code 29.045 (Semiconducting materials)

To find similar documents by ASTM Volume:

10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)

To find similar documents by classification:

29.045 (Semiconducting materials)

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