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Scope

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers a noncontacting, non-destructive procedure to determine the sori of clean, dry semiconductor wafers.

1.2 The test method is applicable to wafers 50 mm or larger in diameter, and 100 [mu]m (0.004 in.) approximately and larger in thickness, independent of thickness variation and surface finish, and of gravitationally-induced wafer distortion.

1.3 This test method employs a two-probe system that examines both external surfaces of the wafer simultaneously.

1.4 This test method measures sori of a wafer corrected for all mechanical forces applied during the test. Therefore, the procedure described gives the unconstrained value of sori. This test method includes a means of canceling gravity-induced deflection which could otherwise alter the shape of the wafer. The resulting parameter is described by Sori in SEMI Specification M1, Appendix A2 Shape Decision Tree (see Annex A1).

1.5 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

1.6 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

Keywords

noncontact measurement; semiconductor; shape; silicon; sori; wafers; ICS Number Code 29.045 (Semiconducting materials)

To find similar documents by ASTM Volume:

10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)

To find similar documents by classification:

29.045 (Semiconducting materials)

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