ASTM-F1725 › Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots (Withdrawn 2003)
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Scope
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect identification, and defect counting.
1.2 This practice is suitable for use if evaluating silicon grown in either [111] or [100] direction and doped either p or n type with resistivity greater than 0.005 Ωcm.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
Keywords
dislocation; grain boundaries; ingot; polycrystaline imperfections; preferential etch; silicon; slip; ICS Number Code 29.045 (Semiconducting materials)
To find similar documents by ASTM Volume:
10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)
To find similar documents by classification:
29.045 (Semiconducting materials)
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Document Number
ASTM-F1725-02
Revision Level
2002 EDITION
Status
Superseded
Modification Type
Withdrawn
Publication Date
Dec. 10, 2002
Document Type
Guide
Page Count
3 pages
Committee Number
F01.06