ASTM-F95 › Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
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Document Number
ASTM-F95-89(1995)e1
Revision Level
1989 R95(E1) EDITION
Status
Superseded
Publication Date
Jan. 1, 1995
Page Count
7 pages