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Scope

1.1 This guide strictly applies only to the exposure of unbiased silicon (SI) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation from a nuclear reactor source to determine the permanent damage in the components. Validated 1-MeV damage functions codified in National Standards are not currently available for other semiconductor materials.

1.2 Elements of this guide with the deviations noted may also be applicable to the exposure of semiconductors comprised of other materials except that validated 1-MeV damage functions codified in National standards are not currently available.

1.3 Only the conditions of exposure are addressed in this guide. The effects of radiation on the test sample should be determined using appropriate electrical test methods.

1.4 This guide addresses those issues and concerns pertaining to irradiations with reactor spectrum neutrons.

1.5 System and subsystem exposures and test methods are not included in this guide.

1.6 This guide is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The range of interest for neutron fluence in displacement damage semiconductor testing range from approximately 10⁹ to 10¹⁶ n/cm ².

1.7 This guide does not address neutron-induced single or multiple neutron event effects or transient annealing.

1.8 This guide provides an alternative to Test Method 1017.3, Neutron Displacement Testing, a component of MIL-STD-883 and MIL-STD-750. The Department of Defense has restricted use of these MIL-STDs to programs existing in 1995 and earlier.

This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Significance and Use

Semiconductor devices are permanently damaged by reactor spectrum neutrons. The effect of such damage on the performance of an electronic component can be determined by measuring the component electrical characteristics before and after exposure to fast neutrons in the neutron fluence range of interest. The resulting data can be utilized in the design of electronic circuits that are tolerant of the degradation exhibited by that component.

This guide provides a method by which the exposure of silicon and gallium arsenide semiconductor devices to neutron irradiation may be performed in a manner that is repeatable and which will allow comparison to be made of data taken at different facilities.

For semiconductors other than silicon and gallium arsenide, this guide provides a method that can improve consistency in the measurements and assurance that data from various facilities can be compared on the same equivalence fluence scale when the applicable validated 1-MeV damage functions are codified in National standards. In the absence of a validated 1-MeV damage function, the non-ionizing energy loss (NIEL) as a function incident neutron energy, normalized to the NIEL at 1 MeV, may be used as an approximation. See Practice E 722 for a description of the method.

Keywords

dosimetry; electronic component; equivalent monoenergetic neutron fluence; fast burst reactor (FBR); gallium arsenide; gamma dose; gamma effects; irradiation; neutron fluence; neutron flux; nickel; 1 MeV equivalent fluence; radiation; reactor; semiconductor; silicon; sulfur; thermoluminescent dosimeter (TLD); TRIGA-type reactor; ICS Number Code 31.020 (Electronic components in general); 31.080.01 (Semi-conductor devices in general)

To find similar documents by ASTM Volume:

10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)

12.02 (Nuclear (II), Solar, and Geothermal Energy)

To find similar documents by classification:

31.020 (Electronic components in general Magnetic components, see 29.100.10)

31.080.01 (Semiconductor devices in general)

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