ASTM-F1262M › Historical Revision Information
Standard Guide for Transient Radiation Upset Threshold of Digital Integrated Circuits
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Scope
1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy (Si)/s.
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
Keywords
digital integrated circuits; digital IC's; functional errors; ionizing; pulsed radiation; radiation; transient radiation; upset threshold
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10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)
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Document Number
ASTM-F1262M-95
Revision Level
1995 EDITION
Status
Superseded
Modification Type
Revision with Designation Change
Publication Date
Nov. 10, 1995
Document Type
Guide
Page Count
5 pages
Committee Number
F01.11