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Scope

1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.

1.2 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of whoever uses this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard information is given in 4.2.7.

Keywords

Annealing; Defects-semiconductors; Destructive testing-semiconductors; Displacement damage; Electrical conductors-semiconductors; Electronic hardness; Hardness tests-radiation (of semiconductors); Integrated circuits; Neutron radiation; Pulsed neutron-radiation source; Radiation exposure-electronic components/devices; Radiation-hardness testing; Short term damage; Vulnerability; rapid annealing of neutron-induced displacement damage in semiconductor; devices, guide,; Rapid annealing effects; neutron-induced displacement damage in semiconductor devices, guide; ICS Number Code 31.080.01 (Semi-conductor devices in general)

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