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Scope

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers measurement of the thickness of silicon wafers, polished or unpolished, and estimation of the variation in thickness across the wafer.

1.2 This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of SEMI Specifications M1. However, it can be applied to circular silicon wafers, or substrates of any diameter and thickness that can be handled without breaking.

1.3 This test method is suitable for both contact and contactless gaging equipment. Precision statements have been established for each.

1.4 The values stated in inch-pound units are to be regarded as standard. The values in parentheses are for information only.

1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

semiconductor; silicon; thickness; thickness variation; total thickness variation; wafer; ICS Number Code 29.045 (Semiconducting materials)

To find similar documents by ASTM Volume:

10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)

To find similar documents by classification:

29.045 (Semiconducting materials)

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